Up to 4 PhD Student Positions in Integrated Devices and Circuits at KTH Royal Institute of Technology
KTH School of Information and Communication Technology seeks one to four Ph.D. Students in electronics in SiC for high temperature and radiation hard environments.
KTH is the largest technical university in Sweden. Education and research cover a broad spectrum within natural sciences and engineering, as well as architecture, industrial engineering and management, urban planning, work science and environmental engineering. KTH has 13 344 full-time equivalent students, of whom 6 955 are at Bachelor (first) level, while 5 545 are at Master (second) level. In addition, 1 314 are full-time equivalent students at doctoral studies (third) level and 3 900 employees.
The school of Information and Communication Technology, ICT, conducts research and education in the Information Technology, Electronics, and Physics. We work with the scientific foundation, as well as the technical infrastructure and services. We have an internationally competitive profile in research in nano-electronics, photonics, electronic and computer systems, software and communication technology. The collaboration with the surrounding companies is facilitated e.g. by Kista Science City. We also offer a broad spectrum of university level education programs.
Description of the positions
The silicon carbide group is part of the department Integrated Devices and Circuits at the ICT-school. We conduct experimental research in the Electrum Laboratory in Kista. Together with Uppsala University, we are starting a large project in integrated electronics in SiC for high temperatures and radiation hard environments, with up to four students placed at KTH and up to two PhD students in Uppsala (advertised separately). The main goal of this project is to demonstrate power and sensor electronic systems at 600 °C using silicon carbide (SiC) integrated circuits, also demonstrating radiation hardness.
1. Power circuit design including device modeling
Mask design of integrated circuit for power system demonstrator (DC/DC-converter etc.). Device modeling (on-wafer or packaged device measurement + Spice model extraction). Fabrication of integrated circuits. Background in power electronics required.
2. Sensor circuit design including device modeling
Mask design of integrated circuit for sensor system demonstrator (amplifier, A/D-converter etc.). Device modeling (on-wafer or packaged device measurement + Spice model extraction). Fabrication of integrated circuits. Background in analog and digital circuit design required.
3. Radiation hardness of SiC devices and circuits
Radiation hardness of the integrated circuits can be determined by controlled accelerator experiments using various ion and neutron sources. Not only the semiconductor material, but also passivation layers, encapsulation and circuit layout are important for the radiation hardness. Background in radiation physics desired.
4. High temperature metallization
Short cycle process experiments on contact metal combinations (ohmic contacts, diffusion barriers, interconnect and bonding pad). Short and long term tests at elevated temperature. Background in material physics desired.
Eligibility and Assessment Criteria
Suitable background is a master degree in electronics/electrical engineering/engineering physics or within similar areas. Furthermore we assume that the successful applicant is self-motivated, curious and with a keen interest in research and experimental work. The applicant should be able to work individually and in group. We expect that the applicant has very good knowledge in semiconductor device physics and microfabrication process technology. Experience in power electronics or analog/digital circuit design is required for some projects, radiation physics or material physics is an advantage. Good knowledge in written and spoken English is mandatory and working knowledge of Swedish is a merit. These qualifications must be highlighted in the application. The evaluation will be based on how well the applicant fulfills the above qualifications.
Form of employment: Time limited, following the recommendations for PhD program employment in the Higher Education Ordinance (~5 years including 20% department service)
Start: To be agreed.
The salary: Follows “KTH:s student salary agreement”
The application must include the following documents:
- Full curriculum vitae
- Degree certificates and transcripts from university /university college
- Motivation letter of why the applicant whishes to become a doctoral student, including a statement of personal priority for the four projects
- Letters of recommendation or contact information for two reference persons
Deadline for application is May,16th 2011
Please refer to the reference number I-2011-0255 in your application.
Applications via e-mail are to be sent to [email protected]
The documents shall be sent as PDF attachments if the application is sent in electronically.
We also accept applications via ordinary post sent to:
KTH – ICT, Registrator
S-164 40 Kista, Sweden
For more information about the position, please contact
Professor Mikael Östling
Phone: +46 (0)8 790 4301
Professor Carl-Mikael Zetterling
Phone: +46 (0)8 790 4344
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